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"Who is Publishing in My
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The
article we have in your registration record is
Park WI, Zheng G, Jiang X, Tian B, Lieber CM: Controlled synthesis of
millimeter-long silicon nanowires with uniform electronic properties. Nano
Lett; 2008 Sep;8(9):3004-9
PMID: 18710294
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List 1: Top 10 Articles Published in
the Same Domain in the Past 6 Months
Note:
when none of the articles in the list is relevant to your topic, this means
there haven't been new publications on your topic in this time-frame.
Tsivion
D, Schvartzman M, Popovitz-Biro R, von Huth P, Joselevich E: Guided
growth of millimeter-long horizontal nanowires with controlled
orientations. Science; 2011 Aug 19;333(6045):1003-7
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Chao HY, You SH, Lu JY, Cheng JH, Chang YH, Liang CT, Wu CT: The growth
and characterization of ZnO/ZnTe core-shell nanowires and the electrical
properties of ZnO/ZnTe core-shell nanowire field effect transistor. J
Nanosci Nanotechnol; 2011 Mar;11(3):2042-6
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Lin L: Synthesis and optical property of large-scale centimetres-long
silicon carbide nanowires by catalyst-free CVD route under superatmospheric
pressure conditions. Nanoscale; 2011 Apr;3(4):1582-91
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Yaman M, Khudiyev T, Ozgur E, Kanik M, Aktas O, Ozgur EO, Deniz H, Korkut
E, Bayindir M: Arrays of indefinitely long uniform nanowires and
nanotubes. Nat Mater; 2011 Jul;10(7):494-501
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Perea-L처pez
N, Rebollo-Plata B, Briones-Le처n JA, Morelos-G처mez A,
Hern찼ndez-Cruz
D, Hirata GA, Meunier V, Botello-M챕ndez AR,
Charlier JC, Maruyama B, Mu챰oz-Sandoval E, L처pez-Ur챠as F,
Terrones M, Terrones H: Millimeter-long carbon nanotubes: outstanding
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Zhang RQ, Hou C, Gao N, Wen Z, Jiang Q: Multi-field effect on the
electronic properties of silicon nanowires. Chemphyschem; 2011
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Kim SH, Umar A, Hwang SW, Al-Sayari SA, Abaker M, Al-Hajry A: Well-crystalline
ZnO nanowire based field effect transistors (FETs). J Nanosci
Nanotechnol; 2011 Jun;11(6):5102-7
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Zhao Y, Smith JT, Appenzeller J, Yang C: Transport modulation in Ge/Si
core/shell nanowires through controlled synthesis of doped Si shells. Nano
Lett; 2011 Apr 13;11(4):1406-11
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Bondi RJ, Lee S, Hwang GS: First-principles study of the structural,
electronic, and optical properties of oxide-sheathed silicon nanowires.
ACS Nano; 2011 Mar 22;5(3):1713-23
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Tsai CC, Chiang PL, Sun CJ, Lin TW, Tsai MH, Chang YC, Chen YT: Surface
potential variations on a silicon nanowire transistor in biomolecular
modification and detection. Nanotechnology; 2011 Apr
1;22(13):135503
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List 2: Top 10 Articles Published in
the Same Domain Since Your Publication
Note:
when none of the articles in the list is relevant to your topic, this means
there haven't been new publications on your topic in this time-frame.
Park WI,
Zheng G, Jiang X, Tian B, Lieber CM: Controlled synthesis of
millimeter-long silicon nanowires with uniform electronic properties. Nano
Lett; 2008 Sep;8(9):3004-9
Go to the article
Celle C, Carella A, Mariolle D, Chevalier N, Rouvi챔re E,
Simonato JP: Highly end-doped silicon nanowires for field-effect
transistors on flexible substrates. Nanoscale; 2010
May;2(5):677-80
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Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y: Single crystalline
PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.
Nano Lett; 2008 Mar;8(3):913-8
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Hu Y, Xiang J, Liang G, Yan H, Lieber CM: Sub-100 nanometer channel
length Ge/Si nanowire transistors with potential for 2 THz switching speed.
Nano Lett; 2008 Mar;8(3):925-30
Go to the article
Chen H, Wang H, Zhang XH, Lee CS, Lee ST: Wafer-scale synthesis of
single-crystal zigzag silicon nanowire arrays with controlled turning
angles. Nano Lett; 2010 Mar 10;10(3):864-8
Go to the article
Tsivion D, Schvartzman M, Popovitz-Biro R, von Huth P, Joselevich E: Guided
growth of millimeter-long horizontal nanowires with controlled
orientations. Science; 2011 Aug 19;333(6045):1003-7
Go to the article
Lugstein A, Steinmair M, Hyun YJ, Hauer G, Pongratz P, Bertagnolli E: Pressure-induced
orientation control of the growth of epitaxial silicon nanowires. Nano
Lett; 2008 Aug;8(8):2310-4
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Demichel O, Calvo V, Besson A, No챕 P,
Salem B, Pauc N, Oehler F, Gentile P, Magnea N: Surface recombination
velocity measurements of efficiently passivated gold-catalyzed silicon
nanowires by a new optical method. Nano Lett; 2010 Jul
14;10(7):2323-9
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Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, G철sele U: Extended
arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by
metal-assisted chemical etching. Nano Lett; 2008
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Lee HS, Kim KS, Kim CJ, Hahn SK, Jo MH: Electrical detection of VEGFs
for cancer diagnoses using anti-vascular endotherial growth factor
aptamer-modified Si nanowire FETs. Biosens Bioelectron; 2009 Feb
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Back to top^
List 3: Top 10 Articles Published in
the Same Domain, All Time
Park WI,
Zheng G, Jiang X, Tian B, Lieber CM: Controlled synthesis of
millimeter-long silicon nanowires with uniform electronic properties. Nano
Lett; 2008 Sep;8(9):3004-9
Go to the article
Celle C, Carella A, Mariolle D, Chevalier N, Rouvi챔re E,
Simonato JP: Highly end-doped silicon nanowires for field-effect
transistors on flexible substrates. Nanoscale; 2010
May;2(5):677-80
Go to the article
Yu Y, Jin CH, Wang RH, Chen Q, Peng LM: High-quality ultralong Bi2S3
nanowires: structure, growth, and properties. J Phys Chem B;
2005 Oct 13;109(40):18772-6
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Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y: Single crystalline
PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.
Nano Lett; 2008 Mar;8(3):913-8
Go to the article
Hu Y, Xiang J, Liang G, Yan H, Lieber CM: Sub-100 nanometer channel
length Ge/Si nanowire transistors with potential for 2 THz switching speed.
Nano Lett; 2008 Mar;8(3):925-30
Go to the article
Luo S, Zhou W, Zhang Z, Liu L, Dou X, Wang J, Zhao X, Liu D, Gao Y, Song L,
Xiang Y, Zhou J, Xie S: Synthesis of long indium nitride nanowires with
uniform diameters in large quantities. Small; 2005
Oct;1(10):1004-9
Go to the article
Chen H, Wang H, Zhang XH, Lee CS, Lee ST: Wafer-scale synthesis of
single-crystal zigzag silicon nanowire arrays with controlled turning
angles. Nano Lett; 2010 Mar 10;10(3):864-8
Go to the article
Tsivion D, Schvartzman M, Popovitz-Biro R, von Huth P, Joselevich E: Guided
growth of millimeter-long horizontal nanowires with controlled
orientations. Science; 2011 Aug 19;333(6045):1003-7
Go to the article
Lugstein A, Steinmair M, Hyun YJ, Hauer G, Pongratz P, Bertagnolli E: Pressure-induced
orientation control of the growth of epitaxial silicon nanowires. Nano
Lett; 2008 Aug;8(8):2310-4
Go to the article
Demichel O, Calvo V, Besson A, No챕 P,
Salem B, Pauc N, Oehler F, Gentile P, Magnea N: Surface recombination
velocity measurements of efficiently passivated gold-catalyzed silicon
nanowires by a new optical method. Nano Lett; 2010 Jul
14;10(7):2323-9
Go to the article
Back to top^
List 4: Top 10 Articles, with Free
Full-Texts, Published in the Same Domain Since Your Publication
Park WI,
Zheng G, Jiang X, Tian B, Lieber CM: Controlled synthesis of
millimeter-long silicon nanowires with uniform electronic properties. Nano
Lett; 2008 Sep;8(9):3004-9
Go to the article
Celle C, Carella A, Mariolle D, Chevalier N, Rouvi챔re E,
Simonato JP: Highly end-doped silicon nanowires for field-effect
transistors on flexible substrates. Nanoscale; 2010
May;2(5):677-80
Go to the article
Liu F, Su ZJ, Mo FY, Li L, Chen ZS, Liu QR, Chen J, Deng SZ, Xu NS: Controlled
synthesis of ultra-long AlN nanowires in different densities and in situ
investigation of the physical properties of an individual AlN nanowire.
Nanoscale; 2011 Feb;3(2):610-8
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Li H, Huang Y, Zhang Q, Qiao Y, Gu Y, Liu J, Zhang Y: Facile synthesis
of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and
magnetic properties. Nanoscale; 2011 Feb;3(2):654-60
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Liu Z, Sun K, Jian WB, Xu D, Lin YF, Fang J: Soluble InP and GaP
nanowires: self-seeded, solution-liquid-solid synthesis and electrical
properties. Chemistry; 2009;15(18):4546-52
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Lin L: Synthesis and optical property of large-scale centimetres-long
silicon carbide nanowires by catalyst-free CVD route under superatmospheric
pressure conditions. Nanoscale; 2011 Apr;3(4):1582-91
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El-Naggar MY, Wanger G, Leung KM, Yuzvinsky TD, Southam G, Yang J, Lau WM,
Nealson KH, Gorby YA: Electrical transport along bacterial nanowires
from Shewanella oneidensis MR-1. Proc Natl Acad Sci U S A; 2010
Oct 19;107(42):18127-31
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Pui TS, Agarwal A, Ye F, Tou ZQ, Huang Y, Chen P: Ultra-sensitive
detection of adipocytokines with CMOS-compatible silicon nanowire arrays.
Nanoscale; 2009 Oct;1(1):159-63
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Xie P, Hu Y, Fang Y, Huang J, Lieber CM: Diameter-dependent dopant
location in silicon and germanium nanowires. Proc Natl Acad Sci U S
A; 2009 Sep 8;106(36):15254-8
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Cohen-Karni T, Timko BP, Weiss LE, Lieber CM: Flexible electrical
recording from cells using nanowire transistor arrays. Proc Natl
Acad Sci U S A; 2009 May 5;106(18):7309-13
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